TOKYO — Ferroelectric RAM partners Infineon Technologies AG and Toshiba Corp. are developing a capacitor-on-plug (COP) design that will take the non-volatile memory to 128-Mbit densities, the partners ...
Resetting industry benchmarks for density and operating speed, the company’s non-volatile ferroelectric random access memory (FeRAM) prototype achieves a storage density of 128 Mb and read/write ...
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