TOKYO — Hitachi Ltd.'s Central Research Laboratory has developed a prototype heterojunction bipolar transistor (HBT) that uses a novel epitaxial growth method — employing silicon, germanium and carbon ...
Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...
Oder, Germany-based Communicant Semiconductor Technologies AG and its technology partner, Innovations for High Performance microelectronics (IHP), today claimed their silicon-germanium BiCMOS process ...
In an effort to gain a competitive edge in the cost-sensitive wireless communications arena, STMicroelectronics has added silicon-germanium (SiGe) biCMOS to its arsenal of process technologies. The ...
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