YOKOHAMA, Japan, Aug. 7, 2023 /PRNewswire/ -- Fujitsu Semiconductor Memory Solution Limited announced the launch of an I2C-interface 512Kbit FeRAM with automotive grade, MB85RC512LY. Evaluation ...

To migrate these devices from laboratory research to large-scale industrial fabrication is still a challenge given the industry's massive investment in silicon technologies and infrastructure. Silicon ...

Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold ...

TOKYO — A new metal organic chemical vapor deposition (MOCVD) system developed by M. Watanabe & Co., Ltd., could provide a production breakthrough for emerging ferroelectric random access memory ...

Controlling the spontaneous polarization of ferroelectric materials is essential for nonvolatile ferroelectric random memory (FeRAM). However, the need for physical contact between electrodes and ...

Oki Electric Industry Co. Ltd. and Symetrix Corp. have embarked on a cooperation and licensing agreement for the joint commercialization of non-destructive read out (NDRO) ferroelectric RAM (FeRAM), ...

This article covers some more interesting content from the 2021 IEEE IEDM and the MRAM Forum that followed the IEDM. We look at some papers from the conference covering magnetic random-access memory ...

Toshiba today in Tokyo unveiled a prototype of a new kind of FeRAM (Ferroelectric RAM) [JP] that might pave the way for more powerful mobile devices and PCs in the future. Toshiba has been doing ...

Toshiba Corp. of Japan and Infineon Technologies AG of Germany on Thursday announced an agreement to jointly develop nonvolatile ferroelectric random access memory (FeRAM) technology and products.

The Tokyo Institute of Technology, Fujitsu Laboratories, and Fujitsu Limited have jointly developed a new material for non-volatile ferroelectric RAM (FeRAM). The material is a modified composition of ...