YOKOHAMA, Japan, Aug. 7, 2023 /PRNewswire/ -- Fujitsu Semiconductor Memory Solution Limited announced the launch of an I2C-interface 512Kbit FeRAM with automotive grade, MB85RC512LY. Evaluation ...
To migrate these devices from laboratory research to large-scale industrial fabrication is still a challenge given the industry's massive investment in silicon technologies and infrastructure. Silicon ...
Researchers in Japan have developed ultrathin ferroelectric capacitors that maintain strong polarization at a stack thickness ...
For semiconductor designers this outlines how a thin ferroelectric stack can retain polarization and support memory ...
An ultrathin ferroelectric capacitor demonstrates strong electric polarization despite being just 30 nm thick including top ...
Oki Electric Industry Co. Ltd. and Symetrix Corp. have embarked on a cooperation and licensing agreement for the joint commercialization of non-destructive read out (NDRO) ferroelectric RAM (FeRAM), ...
Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold ...
The Tokyo Institute of Technology, Fujitsu Laboratories, and Fujitsu Limited have jointly developed a new material for non-volatile ferroelectric RAM (FeRAM). The material is a modified composition of ...
Toshiba today in Tokyo unveiled a prototype of a new kind of FeRAM (Ferroelectric RAM) [JP] that might pave the way for more powerful mobile devices and PCs in the future. Toshiba has been doing ...
Toshiba Corp. of Japan and Infineon Technologies AG of Germany on Thursday announced an agreement to jointly develop nonvolatile ferroelectric random access memory (FeRAM) technology and products.
Results that may be inaccessible to you are currently showing.
Hide inaccessible results
Feedback