Toshiba Corp. said this week that later this year it plans to begin selling flash memory chips based on M-Systems Flash Disk Pioneers Ltd.’s flash memory capacity-doubling technology. It also reported ...

This article covers some more interesting content from the 2021 IEEE IEDM and the MRAM Forum that followed the IEDM. We look at some papers from the conference covering magnetic random-access memory ...

CEA-Leti has reported the world’s-first demonstration of 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node advancing this energy-saving technology closer to commercialisation ...

Ferroelectric random access memory, or FeRAM, has long promised to offer a low-power alternative to flash computer memory, but its limited endurance cannot offset its deficiency in density such that ...

What would life be like if you had access to random access memory that coupled the fast operating characteristics of DRAM with flash memory's ability to retain data while powered off? Pretty darn ...

Hynix Semiconductor Inc. today claimed to be the first memory maker to develop a commercially applicable ferroelectric RAM (FeRAM). FeRAM is a non-volatile, low power, high-density and high speed ...

TOKYO — Seiko Epson Corp. has developed a new ferroelectric material for ferroelectric random-access memory (FeRAM)). The company claimed the material tentatively named PZTN will significantly improve ...

Toshiba has announced that it has developed a new FeRAM (Ferroelectric Random Access Memory) prototype which it claims is the world fastest and highest density non-volatile memory. Although the chip ...

Resetting industry benchmarks for density and operating speed, the company’s non-volatile ferroelectric random access memory (FeRAM) prototype achieves a storage density of 128 Mb and read/write ...

CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22 nm FD-SOI ...