A typical reflective object sensor consists of an infrared light emitter diode (IRED) and an NPN silicon phototransistor mounted side-by-side on parallel axes in a compact black plastic housing. The ...

The Optoelectronics group of Vishay Intertechnology, Inc. has introduced a new reflective optical sensor with a lower profile than previous generation devices. The Vishay Semiconductors VCNT2025X01 ...

Proximity sensors are common enough in automation projects that we hardly give them a second thought — pick something with specs that match the job and move on. But they can be fussy to get adjusted ...

An 880-nm AlGaAs infrared emitter (IRED) and a NPN open-collector photo device (photo-IC) are mounted on a custom, four-leaded TO-72 header to make up the CL1700 Reflective Object Sensor. The IRED ...

Hamamatsu Photonics has recently developed a new reflective sensor named P13567-02CT. The sensor is designed to work with near-infrared/proximity types and is packaged in a compact size. It contains ...

The CLI700 reflective object sensor consists of an 880-nm aluminum-gallium-arsenide (AlGaAs) infrared emitter and an npn, buffered, open-collector IC. Both are mounted on a custom, four-leaded TO-72 ...

Sensors adhering to through-beam, diffuse, or retro-reflective sensor principles offer you choices to optimize performance in various environmental and ambient lighting conditions. Demanding ...