CEA-Leti has reported the world’s-first demonstration of 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node advancing this energy-saving technology closer to commercialisation ...
Over the past five years, NAND flash has gone from an exceedingly expensive storage solution that only a handful of customers could afford to a mainstream product used by millions of high-speed ...
This article covers some more interesting content from the 2021 IEEE IEDM and the MRAM Forum that followed the IEDM. We look at some papers from the conference covering magnetic random-access memory ...
To migrate these devices from laboratory research to large-scale industrial fabrication is still a challenge given the industry's massive investment in silicon technologies and infrastructure. Silicon ...
CEA-Leti demonstrated 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node. It utilizes back-end-of-line (BEOL) integration of TiN/HfO2:Si/TiN ferroelectric capacitors as small ...
A new technical paper titled “Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model” was published by researchers at Georgia Tech, imec and National Technical University ...
How does technology advance? The scientific literature insists on the following trope, to the point where it provides the template for the introduction of most papers on applied science: “Fabulous ...
It's a new year. But in the labs of Jim Heath and Fraser Stoddart in California, that year is not 2007, it's 2020. They have leapt into the future with a memory device that potentially matches the ...
The IEEE International Electron Devices Meeting (IEDM) is always a source of interesting information on the latest developments in solid-state technology and in particular solid state memory and ...
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